参数资料
| 型号： | W949D6CBHX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 49/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 60VFBGA |
| 标准包装： | 312 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 60-TFBGA |
| 供应商设备封装： | 60-VFBGA（8x9） |
| 包装： | 托盘 |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
(X32)
PARAMETER
SYMBOL
TEST CONDITION
-5
-6
- 75
UNIT
Operating one
bank active-
precharge
current
IDD0
tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH; CS is HIGH between valid
commands; address inputs are SWITCHING; data bus inputs are STABLE
40
38
35
mA
Precharge
power-down
standby current
Precharge
power-down
standby current
with clock stop
IDD2P
IDD2PS
all banks idle, CKE is LOW; CS is HIGH, tCK = tCKmin ;
address and control inputs are SWITCHING; data bus inputs
are STABLE
all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK =
HIGH; address and control inputs are SWITCHING; data bus
inputs are STABLE
Low
power
Normal
power
Low
power
Normal
power
0.6
0.8
0.6
0.8
0.6
0.8
0.6
0.8
0.6
0.8
0.6
0.8
mA
mA
Precharge non
power-down
standby current
Precharge non
power-down
standby current
IDD2N
IDD2NS
all banks idle, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and
control inputs are SWITCHING; data bus
inputs are STABLE
all banks idle, CKE is HIGH; CS is HIGH, CK = LOW,
CK = HIGH; address and control inputs are SWITCHING; data bus
10
3
10
3
10
3
mA
mA
with clock stop
inputs are STABLE
Active power-
down standby
current
IDD3P
one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin; address and
control inputs are SWITCHING; data bus inputs are STABLE
3
3
3
mA
Active power-
down standby
current with
clock stop
Active non
power-down
standby current
IDD3PS
IDD3N
one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are STABLE
one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and
control inputs are SWITCHING; data bus inputs are STABLE
3
25
3
25
3
25
mA
mA
Active non
power-down
standby current
with clock stop
Operating burst
read current
Operating burst
write current
Auto-Refresh
Current
Deep Power-
Down current
IDD3NS
IDD4R
IDD4W
IDD5
IDD8(4)
one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are STABLE
one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts;
IOUT = 0 mA; address inputs are SWITCHING; 50% data change each
burst transfer
one bank active; BL = 4; t CK = t CKmin ; continuous write
bursts; address inputs are SWITCHING; 50% data change
each burst transfer
tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is
HIGH; address and control inputs are SWITCHING; data bus inputs are
STABLE
Address and control inputs are STABLE; data bus inputs are STABLE
15
75
55
75
10
15
70
50
75
10
15
70
50
75
10
mA
mA
mA
mA
uA
Notes:
1.
2.
3.
4.
IDD specifications are tested after the device is properly initialized.
Input slew rate is 1V/ns.
Definitions for IDD:
LOW is defined as V IN ≤ 0.1 * V DDQ ;HIGH is defined as V IN ≥ 0.9 * V DDQ ; STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- Address and command: inputs changing between HIGH and LOW once per two clock cycles;
- Data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE.
IDD8 are typical value at 25 ℃ .
Publication Release Date: Sep, 21, 2011
- 49 -
Revision A01-007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D6CBHX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 200MHZ |
| W949D6CBHX5I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA 制造商:Winbond 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA |
| W949D6CBHX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 166MHZ, 65NM |
| W949D6CBHX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
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