参数资料
| 型号： | W949D6CBHX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 43/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 60VFBGA |
| 标准包装： | 312 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 60-TFBGA |
| 供应商设备封装： | 60-VFBGA（8x9） |
| 包装： | 托盘 |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
7.11.3 Self Refresh Entry and Exit
CK
CK
t RP
> t RFC
t XSR
t RFC
CKE
Command
PRE
NOP
ARF
NOP
NOP
NOP
ARF
NOP
ACT
Address
Ba, A
Row n
A10(AP)
DQ
Pre All
High-z
Row n
Recommene
d
Enter
Self Refresh
Mode
Exit from
Self Refresh
Mode
Any Command
(Auto Refresh
)
=Don't Care
7.12 Power Down
Power-down is entered when CKE is registered Low (no accesses can be in progress). If power-down occurs when
all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row
active in any bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output buffers, excluding CK, CK and CKE. In power-down mode,
CKE Low must be maintained, and all other input signals are “Don?t Care”. The minimum power -down duration is
specified by t CKE . However, power-down duration is limited by the refresh requirements of the device.
The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT
command). A valid command may be applied t XP after exit from power-down.
For Clock Stop during Power-Down mode, please refer to the Clock Stop subsection in this specification.
7.12.1 Power-Down Entry and Exit
CK
CK
t RP
t CKE
t XP
CKE
Command
PRE
NOP
NOP
NOP
NOP
NOP
Valid
Address
Valid
A10 (AP)
DQ
Pre All
High-z
Valid
Power Down
Exit from
Any Command
Entry
Precharge Power-Down mode shown; all banks are idle and t RP
is met when Power-down Entry command is issued
- 43 -
Power Down
= Don't Care
Publication Release Date: Sep, 21, 2011
Revision A01-007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D6CBHX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 200MHZ |
| W949D6CBHX5I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA 制造商:Winbond 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA |
| W949D6CBHX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 166MHZ, 65NM |
| W949D6CBHX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
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