参数资料
| 型号： | W949D6CBHX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 35/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 60VFBGA |
| 标准包装： | 312 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 60-TFBGA |
| 供应商设备封装： | 60-VFBGA（8x9） |
| 包装： | 托盘 |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
7.6.3 Write Burst (min. and max. tDQSS)
During Write bursts, the first valid data-in element will be registered on the first rising edge of DQS following the
WRITE command, and the subsequent data elements will be registered on successive edges of DQS. The Low state
of DQS between the WRITE command and the first rising edge is called the write preamble, and the Low state on
DQS following the last data-in element is called the write post-amble.
The time between the WRITE command and the first corresponding rising edge of DQS (t DQSS ) is specified with a
relatively wide range - from 75% to 125% of a clock cycle. Following figure shows the two extremes of t DQSS for a
burst of 4, upon completion of a burst, assuming no other commands have been initiated, the DQs will remain high-Z
and any additional input data will be ignored.
CK
CK
Command
WRITE
NOP
NOP
NOP
NOP
NOP
Address
BA,Col b
t DQSSmin
DQS
DQ
DM
t DQSSmax
DQS
DQ
DM
1) DI b = Data In to column b.
= Don't Care
2) 3 subsequent elements of Data In are applied i nthe programmed order following DI b.
3) A non-interrupted burst of 4 is shown.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
7.6.4 Write to Write
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either
case, a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive
edge of the clock following the previous WRITE command.
The first data-in element from the new burst is applied after either the last element of a completed burst or the last
desired data element of a longer burst which is being truncated. The new WRITE command should be issued X
cycles after the first WRITE command, where X equals the number of desired data-in element pairs.
Publication Release Date: Sep, 21, 2011
- 35 -
Revision A01-007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D6CBHX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 200MHZ |
| W949D6CBHX5I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA 制造商:Winbond 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA |
| W949D6CBHX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X16, 166MHZ, 65NM |
| W949D6CBHX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
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