参数资料
型号: W9751G6IB-25
厂商: Winbond Electronics
文件页数: 37/86页
文件大小: 0K
描述: IC DDR2-800 SDRAM 512MB 84-WBGA
标准包装: 210
格式 - 存储器: RAM
存储器类型: DDR2 SDRAM
存储容量: 512M(32Mx16)
速度: 2.5ns
接口: 并联
电源电压: 1.7 V ~ 1.9 V
工作温度: 0°C ~ 85°C
封装/外壳: 84-TFBGA
供应商设备封装: 84-WBGA(8x12.5)
包装: 托盘
W9751G6IB
9. ELECTRICAL CHARACTERISTICS
9.1
Absolute Maximum Ratings
PARAMETER
Voltage on V DD pin relative to V SS
Voltage on V DDQ pin relative to V SS
Voltage on V DDL pin relative to V SS
Voltage on any pin relative to V SS
Storage Temperature
SYMBOL
V DD
V DDQ
V DDL
V IN , V OUT
T STG
RATING
-1.0 ~ 2.3
-0.5 ~ 2.3
-0.5 ~ 2.3
-0.5 ~ 2.3
-55 ~ 100
UNIT
V
V
V
V
° C
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2, 3
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. When V DD and V DDQ and V DDL are less than 500mV; V REF may be equal to or less than 300mV.
3. Storage temperature is the case surface temperature on the center/top side of the DRAM.
9.2
Operating Temperature Condition
PARAMETER
Operating Temperature
SYMBOL
T OPR
RATING
0~ 85
UNIT
° C
NOTES
1, 2, 3
Notes:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0 ~ 85°C with full JEDEC AC and DC specifications.
3. Supporting 0 ~ 85 °C and being able to extend to 95 °C with doubling Auto Refresh commands in frequency to a 32 mS
period ( t REFI = 3.9 μS) and to enter to Self Refresh mode at this high temperature range via A7 "1" on EMR (2).
9.3
Recommended DC Operating Conditions
(0 ℃ ≤ T CASE ≤ 85 ℃ for 25F/-25/-3, V DD , V DDQ = 1.8V ± 0.1V)
SYM.
V DD
V DDL
V DDQ
V REF
V TT
PARAMETER
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage (System)
MIN.
1.7
1.7
1.7
0.49 x V DDQ
V REF - 0.04
TYP.
1.8
1.8
1.8
0.5 x V DDQ
V REF
MAX.
1.9
1.9
1.9
0.51 x V DDQ
V REF + 0.04
UNIT
V
V
V
V
V
NOTES
1
5
1, 5
2, 3
4
Notes:
1. There is no specific device V DD supply voltage requirement for SSTL_18 compliance. However under all conditions V DDQ
must than or equal to V DD .
2. The value of V REF may be selected by the user to provide optimum noise margin in the system. Typically the value of V REF
is expected to be about 0.5 x V DDQ of the transmitting device and V REF is expected to track variations in V DDQ .
3. Peak to peak AC noise on V REF may not exceed +/-2 % V REF (dc).
4. V TT of transmitting device must track V REF of receiving device.
5. V DDQ tracks with V DD , V DDL tracks with V DD . AC parameters are measured with V DD , V DDQ and V DDDL tied together.
Publication Release Date: Oct. 23, 2009
- 37 -
Revision A06
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