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参数资料
| 型号： | W9816G6IH-5 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 1M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO50 |
| 封装： | 0.400 INCH, ROHS COMPLIANT, TSOP2-50 |
| 文件页数： | 12/42页 |
| 文件大小： | 715K |
| 代理商： | W9816G6IH-5 |
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W9816G6IH
Publication Release Date: Mar. 22, 2010
- 2 -
Revision A02
9.3
Capacitance.................................................................................................................. 13
9.4
DC Characteristics........................................................................................................ 14
9.5
AC Characteristics ........................................................................................................ 15
10.
TIMING WAVEFORMS ............................................................................................................. 17
10.1
Command Input Timing ................................................................................................ 17
10.2
Read Timing.................................................................................................................. 18
10.3
Control Timing of Input/Output Data............................................................................. 19
10.4
Mode Register Set Cycle .............................................................................................. 20
11.
OPERATING TIMING EXAMPLE ............................................................................................. 21
11.1
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 21
11.2
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)........... 22
11.3
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 23
11.4
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)........... 24
11.5
Interleaved Bank Write (Burst Length = 8) ................................................................... 25
11.6
Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26
11.7
Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 27
11.8
Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)................................... 28
11.9
Auto Precharge Read (Burst Length = 4, CAS Latency = 3)........................................ 29
11.10
Auto Precharge Write (Burst Length = 4).................................................................... 30
11.11
Auto Refresh Cycle ..................................................................................................... 31
11.12
Self Refresh Cycle....................................................................................................... 32
11.13
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ........................... 33
11.14
Power Down Mode ...................................................................................................... 34
11.15
Auto-precharge Timing (Read Cycle) ......................................................................... 35
11.16
Auto-precharge Timing (Write Cycle).......................................................................... 36
11.17
Timing Chart of Read to Write Cycle........................................................................... 37
11.18
Timing Chart of Write to Read Cycle........................................................................... 37
11.19
Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 38
11.20
Timing Chart of Burst Stop Cycle (Precharge Command).......................................... 38
11.21
CKE/DQM Input Timing (Write Cycle)......................................................................... 39
11.22
CKE/DQM Input Timing (Read Cycle)......................................................................... 40
12.
PACKAGE SPECIFICATION .................................................................................................... 41
12.1
50L-TSOP (II) 400 mill .................................................................................................. 41
13.
REVISION HISTORY ................................................................................................................42
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相关代理商/技术参数 |
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| W9816G6IH-6 | 功能描述:IC SDRAM 16MBIT 50TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W9816G6IH-6I | 功能描述:IC SDRAM 16MBIT 50TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W9816G6IH-7 | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K 】 2 BANKS 】 16 BITS SDRAM |
| W9816G6IH-7I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K 】 2 BANKS 】 16 BITS SDRAM |
| W982504AH-7 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 SDRAM |
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