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参数资料
| 型号： | WEDPND16M72S-266BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 1/16页 |
| 文件大小： | 441K |
| 代理商： | WEDPND16M72S-266BC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPND16M72S-XBX
May 2003 Rev. 4
The 128MByte (1Gb) DDR SDRAM is a high-speed CMOS,
dynamic random-access, memory using 5 chips containing
268,435,456 bits. Each chip is internally configured as a
quad-bank DRAM. Each of the chip’s 67,108,864-bit banks
is organized as 8,192 rows by 512 columns by 16 bits.
The 128 MB DDR SDRAM uses a double data rate architec-
ture to achieve high-speed operation. The double data rate
architecture is essentially a 2
n-prefetch architecture with an
interface designed to transfer two data words per clock
cycle at the I/O pins. A single read or write access for the
128MB DDR SDRAM effectively consists of a single 2
n-bit
wide, one-clock-cycle data tansfer at the internal DRAM core
and two corresponding
n-bit wide, one-half-clock-cycle
data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along
with data, for use in data capture at the receiver. DQS is a
16Mx72 DDR SDRAM
n High Frequency = 200, 250, 266MHz
n Package:
219 Plastic Ball Grid Array (PBGA), 32 x 25mm
n 2.5V ±0.2V core power supply
n 2.5V I/O (SSTL_2 compatible)
n Differential clock inputs (CLK and CLK)
n Commands entered on each positive CLK edge
n Internal pipelined double-data-rate (DDR) architecture;
two data accesses per clock cycle
n Programmable Burst length: 2,4 or 8
n Bidirectional data strobe (DQS) transmitted/received
with data, i.e., source-synchronous data capture (one
per byte)
n DQS edge-aligned with data for READs; center-aligned
with data for WRITEs
n DLL to align DQ and DQS transitions with CLK
n Four internal banks for concurrent operation
n Two data mask (DM) pins for masking write data
n Programmable IOL/IOH option
n Auto precharge option
n Auto Refresh and Self Refresh Modes
n Commercial, Industrial and Military Temperature Ranges
n Organized as 16M x 72
n Weight: WEDPND16M72S-XBX - 2.5 grams typical
FEATURES
Preliminary*
n 40% SPACE SAVINGS
n Reduced part count
n Reduced I/O count
34% I/O Reduction
n Reduced trace lengths for lower parasitic capacitance
n Suitable for hi-reliability applications
n Laminate interposer for optimum TCE match
n Upgradeable to 32M x 72 density (contact factory for
information)
* This data sheet describes a product that is not fully qualified or characterized
and is subject to change without notice.
GENERAL DESCRIPTION
BENEFITS
25
32
66
TSOP
66
TSOP
66
TSOP
66
TSOP
66
TSOP
11.9
22.3
Monolithic Solution
Actual Size
WEDPND16M72S-XBX
S
A
V
I
N
G
S
Area
I/O
Count
5 x 265mm2 = 1328mm2
5 x 66 pins = 330 pins
800mm2
40%
219 Balls
34%
WEDPND16M72S-XBX
White Electronic Designs
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相关代理商/技术参数 |
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|---|---|
| WEDPNF8M721V-1010BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1010BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1010BM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1012BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1012BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
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