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参数资料
| 型号： | WEDPND16M72S-266BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 15/16页 |
| 文件大小： | 441K |
| 代理商： | WEDPND16M72S-266BC |
8
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WEDPND16M72S-XBX
The WRITE command is used to initiate a burst write access to
an active row. The value on the BA0, BA1 inputs selects the
bank, and the address provided on inputs A0-8 selects the
starting column location. The value on input A10 determines
whether or not AUTO PRECHARGE is used. If AUTO PRECHARGE
is selected, the row being accessed will be precharged at the
end of the WRITE burst; if AUTO PRECHARGE is not selected,
the row will remain open for subsequent accesses. Input data
appearing on the D/Qs is written to the memory array subject
to the DQM input logic level appearing coincident with the
data. If a given DQM signal is registered LOW, the correspond-
ing data will be written to memory; if the DQM signal is regis-
tered HIGH, the corresponding data inputs will be ignored,
and a WRITE will not be executed to that byte/column location.
WRITE
TRUTH TABLE - COMMANDS (NOTE 1)
NOTES:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-12 define the op-code to be written to the selected Mode Register. BA0, BA1 select either the mode register (0, 0) or the extended mode register (1, 0).
3. A0-12 provide row address, and BA0, BA1 provide bank address.
4. A0-8 provide column address; A10 HIGH enables the auto precharge feature (non persistent), while A10 LOW disables the auto precharge feature; BA0, BA1 provide
bank address.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for READ bursts with auto precharge enabled and for
WRITE bursts.
9. DESELECT and NOP are functionally interchangeable.
10. Used to mask write data; provided coincident with the corresponding data.
ACTIVE
READ
The ACTIVE command is used to open (or activate) a row in
a particular bank for a subsequent access. The value on the
BA0, BA1 inputs selects the bank, and the address pro-
vided on inputs A0-12 selects the row. This row remains
active (or open) for accesses until a PRECHARGE command
is issued to that bank. A PRECHARGE command must be
issued before opening a different row in the same bank.
The READ command is used to initiate a burst read access
to an active row. The value on the BA0, BA1 inputs selects
the bank, and the address provided on inputs A0-8 se-
lects the starting column location. The value on input A10
determines whether or not AUTO PRECHARGE is used. If
AUTO PRECHARGE is selected, the row being accessed will
be precharged at the end of the READ burst; if AUTO
NAME (FUNCTION)
CS
RAS
CAS
WE
ADDR
DESELECT (NOP) (9)
H
X
NO OPERATION (NOP) (9)
L
H
X
ACTIVE (Select bank and activate row) ( 3)
L
H
Bank/Row
READ (Select bank and column, and start READ burst) (4)
L
H
L
H
Bank/Col
WRITE (Select bank and column, and start WRITE burst) (4)
L
H
L
Bank/Col
BURST TERMINATE (8)
L
H
L
X
PRECHARGE (Deactivate row in bank or banks) ( 5)
L
H
L
Code
AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6, 7)
L
H
X
LOAD MODE REGISTER (2)
LLLL
Op-Code
TRUTH TABLE - DM OPERATION
NAME (FUNCTION)
DM
DQs
WRITE ENABLE (10)
L
Valid
WRITE INHIBIT (10)
H
X
PRECHARGE is not selected, the row will remain open for
subsequent accesses.
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