参数资料
型号: W9816G6IH-5
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 1M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO50
封装: 0.400 INCH, ROHS COMPLIANT, TSOP2-50
文件页数: 5/42页
文件大小: 715K
代理商: W9816G6IH-5
W9816G6IH
Publication Release Date: Mar. 22, 2010
- 13 -
Revision A02
9. ELECTRICAL CHARACTERISTICS
9.1
Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Input, Output Voltage
VIN, VOUT
-1 ~ VCC + 0.3
V
1
Power Supply Voltage
VCC, VCCQ
-1~ 4.6
V
1
Operating Temperature for -5/-6/-7
TOPR
0 ~ 70
°C
1
Operating Temperature for -6I/-6A/-7I
TOPR
-40 ~ 85
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note:
1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device.
9.2
Recommended DC Operating Conditions
(TA = 0 to 70°C for -5/-6/-7 , TA= -40 to 85°C for -6I/-6A/-7I)
PARAMETER
SYM.
MIN.
TYP.
MAX.
UNIT
NOTES
Power Supply Voltage for -5/-6/-6I/-6A
VCC
3.0
3.3
3.6
V
2
Power Supply Voltage for -7/-7I
VCC
2.7
3.3
3.6
V
2
Power Supply Voltage (I/O Buffer) for -5/-6/-6I/-6A VCCQ
3.0
3.3
3.6
V
2
Power Supply Voltage (I/O Buffer) for -7/-7I
VCCQ
2.7
3.3
3.6
V
2
Input High Voltage
VIH
2.0
-
VCC + 0.3
V
2
Input Low Voltage
VIL
-0.3
-
0.8
V
2
Note
: VIH (max.) = VCC/VCCQ +1.5V for pulse width < 5 nS
VIL (min.) = VSS/VSSQ -1.5V for pulse width < 5 nS
9.3
Capacitance
(VCC = 3.3V ±0.3V, TA = 25 °C, f = 1MHz)
PARAMETER
SYM.
MIN.
MAX.
UNIT
Input Capacitance (A0 to A10, BA,
CS , RAS , CAS , WE ,
UDQM, LDQM, CKE)
CI
-
4
pf
Input Capacitance (CLK)
-
4
pf
Input/Output capacitance (DQ0 to DQ15)
CIO
-
5.5
pf
Note:
These parameters are periodically sampled and not 100% tested
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