参数资料
型号: W986432DH-6
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
封装: 0.400 INCH, 0.50 MM PITCH, TSOP2-86
文件页数: 32/48页
文件大小: 1648K
代理商: W986432DH-6
W986432DH
- 38 -
Operating Timing Example, continued
Auto-precharge Timing (Write Cycle)
D0
Write
Act
AP
0
11
10
9
8
7
6
5
4
3
2
1
D0
AP
Act
D1
AP
Act
D1
D2
D3
D4
D5
D6
D7
AP
Act
AP
Act
AP
Act
D1
D0
AP
Act
D1
D2
D3
AP
Act
D0
D1
D2
D3
D4
D5
D6
D7
Write
D0
(1) CAS
Latency = 2
(2) CAS
Latency = 3
Write
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS (min.)
represents the Write with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
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