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参数资料
| 型号： | WF1M32B-100H1I3 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM MODULE, 100 ns, CPGA66 |
| 封装： | 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 |
| 文件页数： | 7/13页 |
| 文件大小： | 600K |
| 代理商： | WF1M32B-100H1I3 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WF1M32B-XXX3
March 2007
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-0.5 to +4.0
V
Signal Voltage Range
-0.5 to Vcc +0.5
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Endurance (write/erase cycles)
1,000,000 min.
cycles
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
0.7 x VCC VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE#1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS – CMOS COMPATIBLE
VCC = 3.3V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 3.6, VIN = GND or VCC
10
A
Output Leakage Current
ILOx32
VCC = 3.6, VIN = GND or VCC
10
A
VCC Active Current for Read (1)
ICC1
CS# = VIL, OE# = VIH, f = 5MHz
120
mA
VCC Active Current for Program or Erase (2)
ICC2
CS# = VIL, OE# = VIH
140
mA
VCC Standby Current
ICC3
VCC = 3.6, CS = VIH, f = 5MHz
200
A
Output Low Voltage
VOL
IOL =4.0 mA, VCC = 3.0
0.45
V
Output High Voltage
VOH1
IOH = -2.0 mA, VCC = 3.0
0.85 X VCC
V
Low VCC Lock-Out Voltage (4)
VLKO
2.3
2.5
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 8 mA/MHz, with
OE# at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
4. Guaranteed by design, but not tested.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data
150°C
10
Years
Retention Time
125°C
20
Years
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WF1M32B-100HC3 | 制造商:Microsemi Corporation 功能描述:1M X 32 FLASH MODULE, 3.3V, 100NS, BOOT BLOCK, 66 PGA 1.185" - Bulk |
| WF1M32B-100HC3A | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1Mx32 3.3V Flash Module |
| WF1M32B-100HC5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 Flash EEPROM Module |
| WF1M32B-100HC5A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 Flash EEPROM Module |
| WF1M32B-100HI3 | 制造商:Microsemi Corporation 功能描述:1M X 32 FLASH MODULE, 3.3V, 100NS, BOOT BLOCK, 66 PGA 1.185" - Bulk |
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