参数资料
| 型号： | XCV812E-6FG900C |
| 厂商： | Xilinx Inc |
| 文件页数： | 44/118页 |
| 文件大小： | 0K |
| 描述： | IC FPGA 1.8V C-TEMP 900-FBGA |
| 产品变化通告： | FPGA Family Discontinuation 18/Apr/2011 |
| 标准包装： | 1 |
| 系列： | Virtex®-E EM |
| LAB/CLB数： | 4704 |
| 逻辑元件/单元数： | 21168 |
| RAM 位总计： | 1146880 |
| 输入/输出数： | 556 |
| 门数： | 254016 |
| 电源电压： | 1.71 V ~ 1.89 V |
| 安装类型： | 表面贴装 |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 900-BBGA |
| 供应商设备封装： | 900-FBGA |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页当前第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页
Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays
DS025-2 (v3.0) March 21, 2014
Module 2 of 4
27
R
— OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE —
Conflict Resolution
The block SelectRAM+ memory is a true dual-read/write
port RAM that allows simultaneous access of the same
memory cell from both ports. When one port writes to a
given memory cell, the other port must not address that
memory cell (for a write or a read) within the clock-to-clock
setup window. The following lists specifics of port and mem-
ory cell write conflict resolution.
If
both
ports
write
to
the
same
memory
cell
simultaneously,
violating
the
clock-to-clock
setup
requirement, consider the data stored as invalid.
If one port attempts a read of the same memory cell
the
other
simultaneously
writes,
violating
the
clock-to-clock setup requirement, the following occurs.
-
The write succeeds
-
The data out on the writing port accurately reflects
the data written.
-
The data out on the reading port is invalid.
Conflicts do not cause any physical damage.
Single Port Timing
Figure 33 shows a timing diagram for a single port of a block
SelectRAM+ memory. The block SelectRAM+ AC switching
characteristics are specified in the data sheet. The block
SelectRAM+ memory is initially disabled.
At the first rising edge of the CLK pin, the ADDR, DI, EN,
WE, and RST pins are sampled. The EN pin is High and the
WE pin is Low indicating a read operation. The DO bus con-
tains the contents of the memory location, 0x00, as indi-
cated by the ADDR bus.
At the second rising edge of the CLK pin, the ADDR, DI, EN,
WR, and RST pins are sampled again. The EN and WE pins
are High indicating a write operation. The DO bus mirrors
the DI bus. The DI bus is written to the memory location
0x0F.
At the third rising edge of the CLK pin, the ADDR, DI, EN,
WR, and RST pins are sampled again. The EN pin is High
and the WE pin is Low indicating a read operation. The DO
bus contains the contents of the memory location 0x7E as
indicated by the ADDR bus.
At the fourth rising edge of the CLK pin, the ADDR, DI, EN,
WR, and RST pins are sampled again. The EN pin is Low
indicating that the block SelectRAM+ memory is now dis-
abled. The DO bus retains the last value.
Dual Port Timing
Figure 34 shows a timing diagram for a true dual-port
read/write block SelectRAM+ memory. The clock on port A
has a longer period than the clock on Port B. The timing
parameter TBCCS, (clock-to-clock set-up) is shown on this
diagram. The parameter, TBCCS is violated once in the dia-
gram. All other timing parameters are identical to the single
port version shown in Figure 33.
TBCCS is only of importance when the address of both ports
are the same and at least one port is performing a write
operation. When the clock-to-clock set-up parameter is vio-
lated for a WRITE-WRITE condition, the contents of the
memory at that location are invalid. When the clock-to-clock
set-up parameter is violated for a WRITE-READ condition,
the contents of the memory are correct, but the read port
has invalid data. At the first rising edge of CLKA, memory
location 0x00 is to be written with the value 0xAAAA and is
mirrored on the DOA bus. The last operation of Port B was
a read to the same memory location 0x00. The DOB bus of
Port B does not change with the new value on Port A, and
retains the last read value. A short time later, Port B exe-
cutes another read to memory location 0x00, and the DOB
bus now reflects the new memory value written by Port A.
At the second rising edge of CLKA, memory location 0x7E
is written with the value 0x9999 and is mirrored on the DOA
bus. Port B then executes a read operation to the same
memory location without violating the TBCCS parameter and
the DOB reflects the new memory values written by Port A.
相关PDF资料 |
PDF描述 |
|---|---|
| RCB106DHAR-S621 | EDGECARD 212POS DIP R/A .050 SLD |
| XC6VLX240T-1FFG1759C | IC FPGA VIRTEX 6 241K 1759FFGBGA |
| ACC65DRXN | CONN EDGECARD 130PS .100 DIP SLD |
| RMC65DRYI-S734 | CONN EDGECARD 130PS DIP .100 SLD |
| XC4VSX55-10FF1148I | IC FPGA VIRTEX-4SX 1148FFBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| XCV812E-6FG900I | 制造商:XILINX 制造商全称:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG404C | 制造商:XILINX 制造商全称:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG404I | 制造商:XILINX 制造商全称:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG556C | 制造商:XILINX 制造商全称:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG556I | 制造商:XILINX 制造商全称:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
发布紧急采购，3分钟左右您将得到回复。