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参数资料
| 型号： | ZVN3310FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 100V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 40pF @ 25V |
| 功率 - 最大： | 330mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
A Product Line of
Diodes Incorporated
ZVN3310F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
V DS (V)
R DS(ON) ( ? )
Description and Applications
100
10
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High pulse current handling in linear mode
Low input capacitance
Fast switching speed
Lead Free By Design/RoHS Compliant (Note 1)
This MOSFET utilises a structure that combines low input
capacitance with relatively low on-resistance and has an intrinsically
Mechanical Data
higher pulse current handling capability in linear mode than a
comparable trench technology structure. This MOSFET is suitable for
general purpose applications.
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Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020
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General purpose 100V FET
Power management
Disconnect switches
Telecoms
Complementary Type – ZVP3310F
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Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
G
S
Source
Ordering Information
TOP VIEW
(Note 2)
TOP VIEW
Pin Out Configuration
Equivalent Circuit
Product
ZVN3310FTA
Marking
MF
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
Notes:
1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MF
MF = Product Type Marking Code
ZVN3310F
Document Number DS31980 Rev. 4 - 2
1 of 5
www.diodes.com
October 2009
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| ZVN3320A | 功能描述:MOSFET N-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZVN3320ASTOA | 功能描述:MOSFET N-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZVN3320ASTOB | 功能描述:MOSFET N-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZVN3320ASTZ | 功能描述:MOSFET N-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZVN3320B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 250MA I(D) | TO-39 |
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