参数资料
型号: ZXGD3105N8TC
厂商: Diodes Inc
文件页数: 10/14页
文件大小: 0K
描述: IC SYNCH MOSFET CNTLR SO8
特色产品: Synchronous MOSFET Controller
标准包装: 1
配置: 低端
输入类型: 电压
延迟时间: 70ns
电流 - 峰: 4A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 15 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: ZXGD3105N8TCDKR
A Product Line of
Diodes Incorporated
ZXGD3105N8
Application Information (cont.)
Besides that, Proportional Gate Drive improves the rectifier efficiency even at light to medium load condition by ensuring that the MOSFETs
conduct during majority of the conduction cycle as shown in Figure 5a.
At reduced load condition, early termination of the gate drive voltage is likely for digital level gate drive due to the low current, which means that
the threshold V T is breached. With the early termination of the gate drive voltage, MOSFET turns off and the body diode conducts, see Figure 5.
This is shown by an increase in Drain-GND voltage for the remaining time of the current waveform. With the current flowing through the body
diode there will be an increase in power developed within the MOSFET. The efficiency impact due to early termination of digital level gate driver
increases with lower R DS(on) MOSFET and/or higher operating frequency.
(a)
(b)
Figure 5 Timing diagram of synchronous rectification in the resonant converter
(a) Proportional Gate Drive and (b) Digital Level Gate Drive
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
10 of 14
www.diodes.com
March 2013
? Diodes Incorporated
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