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| 型号： | ZXGD3105N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC SYNCH MOSFET CNTLR SO8 |
| 特色产品： | Synchronous MOSFET Controller |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 电压 |
| 延迟时间： | 70ns |
| 电流 - 峰： | 4A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 15 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | ZXGD3105N8TCDKR |
A Product Line of
Diodes Incorporated
ZXGD3105N8
Application Information (cont.)
Gate Driver
The controller is provided with single channel high current gate drive output, capable of driving one or more N-channel power MOSFETs. The
controller can operate from Vcc of 4.5V to drive both standard MOSFETs and logic level MOSFETs.
The Gate pins should be as close to the MOSFET’s gate as possible. A resistor in series with GATE pin helps to control the rise time and
decrease switching losses due to gate voltage oscillation. A diode in parallel to the resistor is typically used to maintain fast discharge of the
MOSFET’s gate.
Figure 6 Typical connection of the ZXGD3105 to the synchronous MOSFET
Quiescent Current Consumption
The quiescent current consumption of the controller is the sum of I REF and I BIAS . For an application that requires ultra-low standby power
consumption, I REF and I BIAS can be further reduced by increasing the value of resistor R REF and R BIAS .
Bias Current, I BIAS
(mA)
0.25
0.35
0.46
0.50
0.55
0.80
Ref Current, I REF
(mA)
0.61
0.81
0.99
1.00
1.13
1.66
Bias Resistor, R BIAS
(k ? )
39.2
28.0
21.5
19.6
17.8
12.1
Ref Resistor, R REF
(k ? )
15.4
11.5
9.3
8.9
8.1
5.6
Quiescent Current, I Q
(mA)
0.86
1.16
1.45
1.50
1.68
2.46
Table 2 Quiescent current consumption for different resistor values at V CC = 10V
I REF also controls the gate driver peak sink current whilst I BIAS controls the peak source current. At the default current value of I REF and I BIAS of
1.02mA and 0.54mA, the gate driver is able to provide 2A source and 6A sink current. The gate current decreases if I REF and I BIAS are reduced.
Care must be taken in reducing the controller quiescent current so that sufficient drive current is still delivered to the MOSFET particularly for high
switching frequency application.
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
11 of 14
www.diodes.com
March 2013
? Diodes Incorporated
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