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参数资料
| 型号： | ZXGD3105N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 8/14页 |
| 文件大小： | 0K |
| 描述： | IC SYNCH MOSFET CNTLR SO8 |
| 特色产品： | Synchronous MOSFET Controller |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 电压 |
| 延迟时间： | 70ns |
| 电流 - 峰： | 4A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 15 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | ZXGD3105N8TCDKR |
A Product Line of
Diodes Incorporated
ZXGD3105N8
Application Information (cont.)
Functional Descriptions for Flyback Converter
The operation of the device is described step-by-step with reference to the timing diagram in Figure 3.
1. The detector stage monitors the MOSFET Drain-Source voltage.
2. When, due to transformer action, the MOSFET body diode is forced to conduct there is a negative voltage on the Drain pin due to the
body diode forward voltage.
3. As the negative Drain voltage crosses the turn-off Threshold voltage V T , the detector stage outputs a positive voltage with respect to
ground after the turn-on delay time t d(fall) . This voltage is then fed to the MOSFET driver stage and current is sourced out of the
GATE pin.
4. The controller goes into proportional gate drive control — the GATE output voltage is proportional to the MOSFET on-resistance-
induced Drain-Source voltage. Proportional gate drive ensures that MOSFET conducts during the majority of the conduction cycle to
minimize power loss in the body diode.
5. As the Drain current decays linearly toward zero, proportional gate drive control reduces the Gate voltage so the MOSFET can be
turned off rapidly at zero current crossing. The GATE voltage falls to 1V when the Drain-Source voltage crosses the detection
threshold voltage to minimize reverse current flow.
6. At zero Drain current, the controller GATE output voltage is pulled low to V G(off) to ensure that the MOSFET is off.
Figure 3 Timing diagram for a critical conduction mode Flyback converter
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
8 of 14
www.diodes.com
March 2013
? Diodes Incorporated
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