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| 型号： | ZXM64P035L3 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 35V 12A TO-220-3 |
| 其它图纸： | TO-220 Pin Out TO-220 Front |
| 标准包装： | 1,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 35V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 2.4A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 825pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 散装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
ZXM64P035L3
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS -35
V
I D =-250 μ A, V GS =0V
I =-250 A, V DS = V GS
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
I DSS
I GSS
V GS(th)
-1.0
-1
100
A
nA
V
V DS =-35V, V GS =0V
V GS = 20V, V DS =0V
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.075
0.105
V GS =-10V, I D =-2.4A
V GS =-4.5V, I D =-1.2A
Forward Transconductance (1)(3)
g fs
2.3
S
V DS =-10V,I D =-1.2A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
825
250
80
pF
pF
pF
V DS =-25V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
4.4
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
6.2
40
29.2
46
9
11.5
ns
ns
ns
nC
nC
nC
V DD =-15V, I D =-2.4A
R G =6.0 , V GS =-10V
V DS =-24V,V GS =-10V,
I D =-2.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
30.2
27.8
-0.95
V
ns
nC
T J =25 C, I S =-2.4A,
V GS =0V
T J =25 C, I F =-2.4A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width = 300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - J UNE 2004
3
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相关代理商/技术参数 |
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| ZXM64P035L3(1) | 制造商:ZETEX 制造商全称:ZETEX 功能描述: |
| ZXM64P03X | 制造商:Diodes Incorporated 功能描述:MOSFET P MSOP-8 制造商:Diodes Incorporated 功能描述:MOSFET, P, MSOP-8 制造商:DIODES 功能描述:MOSFET, P, MSOP-8, Transistor Polarity:P Channel, Continuous Drain Current Id:3. 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 30V, -3.8mA, MSOP, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.8mA, Drain Source Voltage Vds:30V, On Resistance Rds(on):75mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:-1V, No. of Pins:8 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, P, MSOP-8, Transistor Polarity:P Channel, Continuous Drain Current Id:3. |
| ZXM64P03X_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM64P03XTA | 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXM64P03XTC | 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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