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参数资料
| 型号： | ZXMHC10A07T8TA |
| 厂商： | Diodes Inc |
| 文件页数： | 10/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET H-BRIDGE N/P-CH 100V SM8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 通道和 2 个 P 通道（H 桥式） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A，800mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 138pF @ 60V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-223-8 |
| 供应商设备封装： | SM8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1479 (CN2011-ZH PDF) |
| 其它名称： | ZXMHC10A07T8DKR |
ZXMHC10A07T8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
MIN
TYP MAX
MIN
TYP
MAX
A
A1
b
c
D
E
e1
e2
He
Lp
α
β
–
0.02
–
0.24
6.3
3.3
–
–
6.7
0.9
–
–
–
–
0.7
–
–
–
4.59
1.53
–
–
–
10°
1.7
0.1
–
0.32
6.7
3.7
–
–
7.3
–
15°
–
–
0.0008
–
0.009
0.248
0.130
–
–
0.264
0.035
–
–
–
–
0.028
–
–
–
0.180
0.060
–
–
–
10°
0.067
0.004
–
0.013
0.264
0.145
–
–
0.287
–
15°
–
Controlling dimensions are in millimetres. Approximate conversions are given in inches
? Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstra?e 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
10
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMHC3A01N8TC | MOSFET H-BRIDGE COMPL 8-SOIC |
| ZXMHC3F381N8TC | MOSFET COMPL H-BRIDGE 30V 8-SOIC |
| ZXMHC6A07N8TC | MOSFET COMPL H-BRIDGE 60V 8-SOIC |
| ZXMHC6A07T8TA | MOSFET H-BRIDGE N/P-CH 60V SM8 |
| ZXMHN6A07T8TA | MOSFET N-CHAN 60V 1.6A SOT223-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMHC10A07T8TC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3A01N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V SO8 Complementary enhancement mode MOSFET H-Bridge |
| ZXMHC3A01N8TC | 功能描述:MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMHC3A01T8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3A01T8TA | 功能描述:MOSFET 30/30V 3.1/2.3A N & P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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