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参数资料
| 型号： | ZXMHC10A07T8TA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET H-BRIDGE N/P-CH 100V SM8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 通道和 2 个 P 通道（H 桥式） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A，800mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 138pF @ 60V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-223-8 |
| 供应商设备封装： | SM8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1479 (CN2011-ZH PDF) |
| 其它名称： | ZXMHC10A07T8DKR |
ZXMHC10A07T8
N-Channel
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V (BR)DSS
I DSS
I GSS
100
1
100
V
A
nA
I D = 250 A, V GS =0V
V DS =100V, V GS =0V
V GS =±20V, V DS =0V
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1) (3)
V GS(th)
R DS(on)
g fs
2.0
1.6
4.0
0.7
0.9
V
S
I D = 250 A, V DS =V GS
V GS = 10V, I D = 1.5A
V GS = 6V, I D = 1.0A
V DS = 15V, I D = 1.0A
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
138
12
6
pF
pF
pF
V DS = 60V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
t d(on)
1.8
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
1.5
4.1
2.1
2.9
0.7
1.0
ns
ns
ns
nC
nC
nC
V DD = 50V, I D = 1.0A
R G ? 6.0 , V GS = 10V
V DS = 50V, V GS = 10V
I D = 1.0A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.95
V
T j =25°C, I S = 1.5A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
27
12
ns
nC
T j =25°C, I S = 1.8A,
di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
4
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相关代理商/技术参数 |
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|---|---|
| ZXMHC10A07T8TC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3A01N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V SO8 Complementary enhancement mode MOSFET H-Bridge |
| ZXMHC3A01N8TC | 功能描述:MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMHC3A01T8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC3A01T8TA | 功能描述:MOSFET 30/30V 3.1/2.3A N & P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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