参数资料
型号: ZXMN2A03E6TC
厂商: Diodes Inc
文件页数: 7/7页
文件大小: 0K
描述: MOSFET N-CHAN 20V SOT23-6
标准包装: 10,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 55 毫欧 @ 7.2A,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 8.2nC @ 4.5V
输入电容 (Ciss) @ Vds: 837pF @ 10V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 带卷 (TR)
ZXMN2A03E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
b
e
L 2
E
E1
e1
a
DATUM A
D
C
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
DIM
Millimetres
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
A1
A2
0.90
0.00
0.90
1.45
0.15
1.30
0.35
0
0.035
0.057
0.006
0.051
E
E1
L
2.60
1.50
0.10
3.00
1.75
0.60
0.102
0.059
0.004
0.118
0.069
0.002
b
C
0.35
0.09
0.50
0.20
0.014
0.0035
0.019
0.008
e
e1
0.95 REF
1.90 REF
0.037 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
10°
10°
? Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstra?e 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 4 - SEPTEMBER 2005
7
相关PDF资料
PDF描述
ZXMN2A04DN8TC MOSFET DUAL N-CHAN 20V 8SOIC
ZXMN2A14FTA MOSFET N-CH 20V 3.4A SOT23-3
ZXMN2AM832TA MOSFET N-CHAN DUAL 20V 8MLP
ZXMN2AMCTA MOSFET 2N-CH 20V 2.9A DFN
ZXMN2B01FTA MOSFET N-CH 20V 2.1A SOT23-3
相关代理商/技术参数
参数描述
ZXMN2A04DN8 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A04DN8_04 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A04DN8TA 功能描述:MOSFET Dl 20V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2A04DN8TC 功能描述:MOSFET Dl 20V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2A05N8TA 功能描述:MOSFET N-CH 20V 12A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件