参数资料
型号: ZXMN2F34FHTA
厂商: Diodes Inc
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CHAN 20V SOT23-3
其它图纸: SOT-23
SOT-23 Top
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 60 毫欧 @ 2.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 2.8nC @ 4.5V
输入电容 (Ciss) @ Vds: 277pF @ 10V
功率 - 最大: 950mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 标准包装
产品目录页面: 1472 (CN2011-ZH PDF)
其它名称: ZXMN2F34FHDKR
ZXMN2F34FH
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source Breakdown
V (BR)DSS
20
V
I D = 250 μ A, V GS =0V
Voltage
Zero Gate Voltage Drain
I DSS
1
μ A
V DS = 20V, V GS =0V
Current
Gate-Body Leakage
I GSS
100
nA
V GS =±12V, V DS =0V
Gate-Source Threshold
V GS(th)
0.5
0.8
1.5
V
I D = 250 μ A, V DS =V GS
Voltage
Static Drain-Source
On-State Resistance (*)
Forward
R DS(on)
g fs
7.5
0.060
0.120
Ω
Ω
S
V GS = 4.5V, I D = 2.5A
V GS = 2.5V, I D = 1.0A
V DS = 10V, I D = 2.5A
Transconductance (*)(?)
Dynamic (?)
Input Capacitance
C iss
277
pF
Output Capacitance
Reverse Transfer
C oss
C rss
65
35
pF
pF
V DS = 10V, V GS =0V
f=1MHz
Capacitance
Switching (?)(?)
Turn-On-Delay Time
t d(on)
2.65
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
4.2
9.9
5.1
2.8
0.61
0.63
ns
ns
ns
nC
nC
nC
V DD = 10V, V GS = 4.5V
I D = 1A
R G ≈ 6.0 Ω
V DS = 10V, V GS = 4.5V
I D = 2.5A
Source-drain diode
Diode Forward Voltage (*)
Reverse recovery time (?)
V SD
t rr
0.73
6.5
1.2
V
ns
I S = 1.25A, V GS =0V
T j =25 o C, I F =1.65A
Reverse recovery charge (?) Q rr
1.4
nC
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
(?) For design aid only, not subject to production testing.
(?) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
? Zetex Semiconductors plc 2008
4
www.zetex.com
相关PDF资料
PDF描述
ZXMN3A01FTC MOSFET N-CHAN 30V SOT23-3
ZXMN3A02N8TA MOSFET N-CH 30V 5.3A 8-SOIC
ZXMN3A02X8TA MOSFET N-CH 30V 5.3A 8-MSOP
ZXMN3A03E6TC MOSFET N-CHAN 30V SOT23-6
ZXMN3A04DN8TC MOSFET DUAL N-CHAN 30V 8SOIC
相关代理商/技术参数
参数描述
ZXMN2F34MA 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V DFN2X2 N-channel enhancement mode MOSFET
ZXMN2F34MATA 功能描述:MOSFET 20V N-Channel Enhance. Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2H34FHTA 制造商:Diodes Incorporated 功能描述:N/A - Tape and Reel
ZXMN3A01 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A01E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6