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参数资料
| 型号： | ZXMN3A06DN8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CHAN 30V 8SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 796pF @ 25V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
ZXMN3A06DN8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
I =250 A, V DS = V GS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
30
1
0.5
100
V
A
nA
V
I D =250 μ A, V GS =0V
V DS =30V, V GS =0V
V GS = ± 20V, V DS =0V
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.035
0.050
V GS =10V, I D =9A
V GS =4.5V, I D =7.4A
Forward Transconductance (1)(3)
g fs
13.5
S
V DS =15V,I D =9A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
796
137
83.5
pF
pF
pF
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
3.0
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
6.4
21.6
9.4
9.2
17.5
2.3
3.1
ns
ns
ns
nC
nC
nC
nC
V DD =15V, I D =3.5A
R G =6.0 , V GS =10V
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.85
17.8
11.6
0.95
V
ns
nC
T J =25°C, I S =5.1A,
V GS =0V
T J =25°C, I F =3.5A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - OCTOBER 2002
4
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