参数资料
型号: ZXMN6A11DN8TC
厂商: Diodes Inc
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CHAN 60V 8SOIC
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 120 毫欧 @ 2.5A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 5.7nC @ 10V
输入电容 (Ciss) @ Vds: 330pF @ 40V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)
ZXMN6A11DN8
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V GS = 10V; T amb =25°C (b)
@ V GS = 10V; T amb =70°C (b)
@ V GS = 10V; T amb =25°C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T amb =25°C (a)(d)
Linear derating factor
Power dissipation at T amb =25°C (a)(e)
Linear derating factor
Power dissipation at T amb =25°C (b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
T j , T stg
Limit
60
±20
3.2
2.6
2.5
13.7
3.1
13.7
1.25
10
1.8
14
2.1
17
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient (a)(d)
R JA
100
°C/W
Junction to ambient (a)(e)
Junction to ambient (b)(d)
R JA
R JA
70
60
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Issue 3 - September 2006
? Zetex Semiconductors plc 2006
2
www.zetex.com
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