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| 型号： | ZXMN6A11DN8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 60V 8SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 40V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
ZXMN6A11DN8
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max. Unit Conditions
Static
Drain-source breakdown voltage V (BR)DSS
60
V
I D = 250 A, V GS =0V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance (*)
Forward transconductance (*)(?)
I DSS
I GSS
V GS(th)
R DS(on)
g fs
1.0
4.9
1.0
100
0.120
0.180
A
nA
V
S
V DS = 60V, V GS =0V
V GS =±20V, V DS =0V
I D = 250 A, V DS =V GS
V GS = 10V, I D = 2.5A
V GS = 4.5V, I D = 2A
V DS = 15V, I D = 2.5A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
330
35.2
17.1
pF
pF
pF
V DS = 40V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
1.95
3.5
8.2
4.6
3.0
ns
ns
ns
ns
nC
V DD = 30V, I D = 2.5A
R G ? 6.0 , V GS = 10V
V DS = 15V, V GS = 5V
I D = 2.5A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
5.7
1.25
0.86
nC
nC
nC
V DS = 15V, V GS = 10V
I D = 2.5A
Source-drain diode
Diode forward voltage (*)
V SD
0.85
0.95
V
T j =25°C, I S = 2.8A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
21.5
20.5
ns
nC
T j =25°C, I S = 2.5A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 3 - September 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMN6A11ZTA | MOSFET N-CH 60V 2.4A SOT-89 |
| ZXMN6A25DN8TA | MOSFET 2N-CH 60V 4.6A 8-SOIC |
| ZXMN6A25G | MOSFET N-CHAN 60V SOT223 |
| ZXMN6A25K | MOSFET N-CHAN 60V DPAK |
| ZXMN7A11GTA | MOSFET N-CH 70V 3.8A SOT-223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN6A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 4.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:4;RoHS Compliant: Yes |
| ZXMN6A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN6A11G_06 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A11GFTA | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A11GFTC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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