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| 型号： | ZXMP10A17E6TA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH TRENCH -100V SOT23-6 |
| 其它图纸： | SOT-23-6 Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 1.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.1nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 424pF @ 50V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMP10A17E6DKR |
ZXMP10A17E6
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
Symbol
V DSS
V GS
Value
-100
± 20
-1.6
Unit
V
V
Continuous Drain Current
V GS = 10V
T A = +70°C (Note 6)
I D
-1.3
A
(Note 5)
-1.3
Pulsed Drain Current
V GS = 10V
(Note 7)
I DM
-7.7
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
(Note 7)
I S
I SM
-2.1
-7.7
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
R θ JA
T J , T STG
1.1
8.8
1.7
13.7
113
73
-55 to +150
W
mW/ ° C
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-100
?
?
?
?
?
?
-0.5
± 100
V
μA
nA
I D = -250μA, V GS = 0V
V DS = -100V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
-2
?
?
?
?
?
?
2.8
-0.85
33
48
-4
0.35
0.45
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250μA, V DS = V GS
V GS = -10V, I D = -1.4A
V GS = -6V, I D = -1.2A
V DS = -15V, I D = -1.4A
I S = -1.7A, V GS = 0V
I S = -1.5A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
424
36.6
29.8
7.1
10.7
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = -50V, V GS = 0V
F = 1MHz
V GS = -6V
V DS = -50V
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Q gs
Q gd
t D(on)
?
?
?
1.7
3.8
3
?
?
?
nC
nC
ns
V GS = -10V
I D = -1.4A
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
t r
t D(off)
t f
?
?
?
3.5
13.4
7.2
?
?
?
ns
ns
ns
V DD = -50V, V GS = -10V
I D = -1A, R G ? 6 ?
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 5 sec.
7. Same as note (5), except the device is pulsed with D = 0.05 and pulse width 10μs. The pulse current is limited by the maximum junction temperature.
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6
Document Number DS32027 Rev. 6 - 2
2 of 7
www.diodes.com
January 2014
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMP10A17E6TC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP10A17G | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:100V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP10A17GTA | 功能描述:MOSFET 100V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMP10A17K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:100V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP10A17KTC | 功能描述:MOSFET 100V P-Ch MOSFET 20V VGS -11.3A IDM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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