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| 型号： | ZXMP6A13FTA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 900MA SOT23-3 |
| 其它图纸： | SOT-23 SOT-23 Top |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 900mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 900mA，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 219pF @ 30V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMP6A13FDKR |
A Product Line of
Diodes Incorporated
ZXMP6A13F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 7)
Symbol
V DSS
V GS
Value
-60
±20
-1.1
Units
V
V
Continuous Drain Current
V GS = 10V
T A = 70°C
(Note 7)
I D
-0.8
A
(Note 6)
-0.9
Pulsed Drain Current (Note 8)
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)
I DM
I S
I SM
-4.0
-1.2
-4.0
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Linear Derating Factor
Power Dissipation (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
R θ JL
T J, T STG
Value
625
5
806
6.5
200
155
194
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10 μ s - pulse current limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXMP6A13F
Document Number DS32014 Rev. 6 - 2
2 of 8
www.diodes.com
September 2012
? Diodes Incorporated
相关PDF资料 |
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| ZXMP6A17DN8TA | MOSFET 2P-CH 60V 3.1A 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMP6A13FTA-CUT TAPE | 制造商:DIODES 功能描述:ZXMP6A13F Series 60 V 0.4 Ohm P-Channel Enhancement Mode MOSFET - SOT-23 |
| ZXMP6A13FTC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP6A13G | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP6A13G_07 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMP6A13GTA | 功能描述:MOSFET 60V P-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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