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参数资料
| 型号： | 2N5912 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78 |
| 封装： | HERMETIC SEALED, TO-78, 7 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 58K |
| 代理商： | 2N5912 |
2N5911/5912
Vishay Siliconix
www.vishay.com
8-2
Document Number: 70255
S-04031—Rev. D, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5911
2N5912
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = –1 mA, VDS = 0 V
–35
–25
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 nA
–3.5
–1
–5
–1
–5
V
Saturation Drain Currentb
IDSS
VDS = 10 V, VGS = 0 V
15
7
40
7
40
mA
VGS = –15 V, VDS = 0 V
–1
–100
pA
Gate Reverse Current
IGSS
TA = 150_C
–2
–250
nA
VDG = 10 V, ID = 5 mA
–1
–100
pA
Gate Operating Current
IG
TA = 125_C
–0.3
–100
nA
Gate-Source Voltage
VGS
VDG = 10 V, IG = 5 mA
–1.5
–0.3
–4
–0.3
–4
Gate-Source
Forward Voltagec
VGS(F)
IG = 1 mA, VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
gfs
VDG = 10 V, ID = 5 mA
6
5
10
5
10
mS
Common-Source
Output Conductance
gos
VDG = 10 V, ID = 5 mA
f = 1 kHz
70
100
mS
Common-Source
Forward Transconductance
gfs
VDG = 10 V, ID = 5 mA
5.8
5
10
5
10
mS
Common-Source
Output Conductance
gos
VDG = 10 V, ID = 5 mA
f = 100 MHz
90
150
mS
Common-Source
Input Capacitance
Ciss
VDG = 10 V, ID = 5 mA
3
5
Common-Source Reverse
Transfer Capacitance
Crss
VDG = 10 V, ID = 5 mA
f = 1 MHz
1
1.2
pF
Equivalent Input
Noise Voltage
en
VDG = 10 V, ID = 5 mA
f = 10 kHz
4
20
nV
√Hz
Noise Figure
NF
RG = 100 kW
0.1
1
dB
Matching
Differential
Gate-Source Voltage
|V
GS1 – VGS2
|
VDG = 10 V, ID = 5 mA
4
10
15
mV
Gate-Source Voltage
Differential Change
with Temperature
D|V
GS1 – VGS2
|
DT
VDG = 10 V, ID = 5 mA
TA = –55 to 125_C
15
20
40
mV/_C
Saturation Drain
Current Ratio
I
DSS1
I
DSS2
VDS = 10 V, VGS = 0 V
0.98
0.95
1
0.95
1
Transconductance Ratio
g
fs1
g
fs2
VDS = 10 V, ID = 5 mA
f = 1 kHz
0.98
0.95
1
0.95
1
Differential Gate Current
|I
G1–IG2
|
VDG = 10 V, ID = 5 mA, TA = 125_C
0.005
20
nA
Common Mode
Rejection Ratioc
CMRR
VDG = 5 to 10 V, ID = 5 mA
85
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZF
b.
Pulse test: PW
v300 ms duty cycle v3%.
c.
This parameter not registered with JEDEC.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5912 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET DUAL N TO-78 |
| 2N5912_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912C_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912-E3 | 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5913 | 制造商:STMicroelectronics 功能描述:2N5913 |
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