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参数资料
| 型号： | 2N5912 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78 |
| 封装： | HERMETIC SEALED, TO-78, 7 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 58K |
| 代理商： | 2N5912 |
2N5911/5912
Vishay Siliconix
www.vishay.com
8-6
Document Number: 70255
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
100
1 k
100 k
10 k
50
40
10
0
150
120
90
30
0
0.1
1
10
60
30
20
Equivalent Input Noise Voltage vs. Frequency
ID = 1 mA
VDS = 10 V
f – Frequency (Hz)
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125
_C
200
0
–10
–8
–2
160
40
0
0.1
110
10
8
2
0
200
160
120
40
0
120
80
–4
–6
6
4
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125
_C
10 mA
VDS = 10 V
f = 1 kHz
VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
VGS(off) = –5 V
25
_C
25
_C
e
n
–
Noise
V
oltage
nV
/
Hz
g
os
–
Output
Conductance
(
S)
g
os
–
Output
Conductance
(
S)
g
fs
–
Forward
T
ransconductance
(mS)
r DS
(on)
–
Drain-Source
On-Resistance
(
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5912 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET DUAL N TO-78 |
| 2N5912_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912C_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912-E3 | 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5913 | 制造商:STMicroelectronics 功能描述:2N5913 |
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