参数资料
型号: 2N5912
厂商: VISHAY SILICONIX
元件分类: 小信号晶体管
英文描述: 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78
封装: HERMETIC SEALED, TO-78, 7 PIN
文件页数: 3/7页
文件大小: 58K
代理商: 2N5912
2N5911/5912
Vishay Siliconix
Document Number: 70255
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
50
0
–10
–8
–2
40
10
0
20
16
4
0
30
20
12
8
–4
–6
0
4
16
20
812
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
IG(on) @ ID
IGSS @ 25
_C
TA = 125_C
10 mA
1 mA
TA = 25_C
IGSS @ 125
_C
1 mA
ID = 10 mA
Gate
Leakage
I
G
10
06
8
210
8
6
2
0
4
Output Characteristics
VDS – Drain-Source Voltage (V)
Drain
Current
(mA)
I
D
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS(off) = –2 V
5
0
0.2
0.8
1
4
1
0
2
3
0.4
0.6
Output Characteristics
VDS – Drain-Source Voltage (V)
Drain
Current
(mA)
I
D
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS = 0 V
VGS(off) = –2 V
15
0
0.2
0.8
1
12
3
0
9
6
0.4
0.6
Output Characteristics
VDS – Drain-Source Voltage (V)
Drain
Current
(mA)
I
D
VGS = 0 V
–1.5 V
–0.5 V
–2.5 V
–1.0 V
–3.0 V
–3.5 V
–2.0 V
VGS(off) = –5 V
30
08
210
24
6
0
18
12
46
Output Characteristics
VDS – Drain-Source Voltage (V)
Drain
Current
(mA)
I
D
VGS = 0 V
–0.5 V
–2.5 V
–2.0 V
–3.0 V
–3.5 V
–1.0 V
–1.5 V
VGS(off) = –5 V
100 pA
1 nA
10 nA
100 nA
g
fs
Forward
T
ransconductance
(mS)
I DS
S
Saturation
Drain
Current
(mA)
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