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参数资料
| 型号： | 2N5912 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78 |
| 封装： | HERMETIC SEALED, TO-78, 7 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 58K |
| 代理商： | 2N5912 |
2N5911/5912
Vishay Siliconix
www.vishay.com
8-4
Document Number: 70255
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
0
–0.4
–1.6
–2
8
2
0
10
0
–1.2
–1.6
–0.4
–2
8
4
2
0
6
4
6
–0.8
–1.2
–0.8
30
0
–4
–5
–1
24
6
0
18
12
–2
–3
10
–5
–4
–1
0
8
2
0
6
4
–2
–3
Transfer Characteristics
VGS – Gate-Source Voltage (V)
–
Drain
Current
(mA)
I
D
TA = –55_C
125
_C
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
TA = –55_C
125
_C
Transfer Characteristics
TA = –55_C
125
_C
VGS – Gate-Source Voltage (V)
TA = –55_C
Transconductance vs. Gate-Source Voltage
–
Drain
Current
(mA)
I
D
VGS – Gate-Source Voltage (V)
125
_C
110
0.1
50
40
20
10
0
30
ID – Drain Current (mA)
A
V +
g
fs RL
1
) R
Lgos
R
L +
10 V
I
D
Assume VDD = 15 V, VDS = 5 V
VGS(off) = –2 V
A
V
–
V
oltage
Gain
Circuit Voltage Gain vs. Drain Current
1
10
100
200
160
80
40
0
120
VGS(off) = –2 V
TA = 25_C
On-Resistance vs. Drain Current
ID – Drain Current (mA)
VDS = 10 V
f = 1 kHz
VGS(off) = –2 V
VDS = 10 V
VGS(off) = –5 V
VDS = 10 V
VGS(off) = –2 V
VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
–5 V
25
_C
25
_C
25
_C
25
_C
VGS(off) = –5 V
g
fs
–
Forward
T
ransconductance
(mS)
r DS
(on)
–
Drain-Source
On-Resistance
(
)
g
fs
–
Forward
T
ransconductance
(mS)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5912 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET DUAL N TO-78 |
| 2N5912_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912C_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912-E3 | 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5913 | 制造商:STMicroelectronics 功能描述:2N5913 |
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