参数资料
型号: 2N7002K-7
厂商: Diodes Inc
文件页数: 5/6页
文件大小: 0K
描述: MOSFET N-CH 60V 300MA SOT23-3
产品变化通告: Encapsulate Change 15/May/2008
Copper Bond Wire Change 3/May/2011
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 380mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 0.3nC @ 4.5V
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 370mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 标准包装
其它名称: 2N7002K-7-DIDKR
2N7002K
1
0.1
0.01
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
R ? JA(t) (t) * R ? JA
0.001
D = 0.005
D = Single Pulse
=r
R ? JA = 240 ? C/W
Duty Cycle, D = t1/t2
0.000001 0.00001
0.0001
0.001 0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim Min Max Typ
A
B
0.37 0.51 0.40
1.20 1.40 1.30
H
B C
C
D
F
G
H
J
2.30 2.50 2.40
0.89 1.03 0.915
0.45 0.60 0.535
1.78 2.05 1.83
2.80 3.00 2.90
0.013 0.10 0.05
K
K1
M
K
K1
0.903 1.10 1.00
- - 0.400
J
F
G
D
L
L
M
0.45 0.61 0.55
0.085 0.18 0.11
??
0° 8° -
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version
Y
Dimensions Value (in mm)
Z
2N7002K
Document number: DS30896 Rev. 14 - 2
X
E
C
5 of 6
www.diodes.com
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
August 2013
? Diodes Incorporated
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