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参数资料
| 型号： | 2N7606U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 196K |
| 代理商： | 2N7606U3 |
IRHLNJ77034, 2N7606U3
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
22*
ISM
Pulse Source Current (Body Diode)
——
88
VSD
Diode Forward Voltage
—
1.2
V
Tj = 25°C, IS = 22A, VGS = 0V
trr
Reverse Recovery Time
—
160
ns
Tj = 25°C, IF = 22A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
704
nC
VDD ≤ 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
—
V
VGS = 0V, ID = 250A
BVDSS/TJ Temperature Coefficient of Breakdown —
0.068
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.035
VGS = 4.5V, ID = 20A
Resistance
VGS(th)
Gate Threshold Voltage
1.0
—
2.0
V
VDS = VGS, ID = 250A
VGS(th)/TJ Gate Threshold Voltage Coefficient
—
-4.9
—
mV/°C
gfs
Forward Transconductance
15
—
S
VDS = 10V, IDS = 20A
IDSS
Zero Gate Voltage Drain Current
—
1.0
VDS= 48V ,VGS=0V
——
10
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
Qg
Total Gate Charge
—
34
VGS = 4.5V, ID = 22A
Qgs
Gate-to-Source Charge
—
8.0
nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
16
td(on)
Turn-On Delay Time
—
26
VDD = 30V, ID = 22A,
tr
Rise Time
—
110
VGS = 5.0V, RG = 7.5
td(off)
Turn-Off Delay Time
—
54
tf
Fall Time
—
30
LS + LD
Total Inductance
—
4.0
—
Ciss
Input Capacitance
—
2015
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
488
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
4.5
—
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
* Current is limited by package
Rg
Gate Resistance
1.45
f = 1.0MHz, open drain
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
2.2
°C/W
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