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参数资料
| 型号： | 2N7606U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 196K |
| 代理商： | 2N7606U3 |
IRHLNJ77034, 2N7606U3
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
10
100
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
60
s PULSE WIDTH
Tj = 150°C
2.3V
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.30V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
60
s PULSE WIDTH, Tj = 25°C
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.30V
2.30V
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
VGS = 4.5V
ID = 22A
2
2.533.544.5
5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VDS = 25V
6
0s PULSE WIDTH
TJ = 150°C
TJ = 25°C
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