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参数资料
| 型号： | 2N7606U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 196K |
| 代理商： | 2N7606U3 |
www.irf.com
9
Pre-Irradiation
IRHLNJ77034, 2N7606U3
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.26mH
Peak IL = 22A, VGS = 10V
ISD ≤ 22A, di/dt ≤ 328A/s,
VDD ≤ 60V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2010
Case Outline and Dimensions — SMD-0.5
1 = DRAIN
2 = GATE
3 = SOURCE
PAD ASSIGNMENTS
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