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参数资料
| 型号： | 2N7606U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 196K |
| 代理商： | 2N7606U3 |
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7
Pre-Irradiation
IRHLNJ77034, 2N7606U3
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 13. Maximum Safe Operating Area
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
9.8A
13.9A
BOTTOM
22A
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
P
t
DM
1
2
1
10
100
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
s
DC
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相关代理商/技术参数 |
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|---|---|
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