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参数资料
| 型号： | 2N7606U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 196K |
| 代理商： | 2N7606U3 |
www.irf.com
5
Pre-Irradiation
IRHLNJ77034, 2N7606U3
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
DrainCurrent
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
60
70
80
90
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
ID = 1.0mA
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
10
20
30
40
50
60
70
80
90
100
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 150°C
Vgs = 4.5V
2
4
6
8
10
12
VGS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
70
80
90
100
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
ID = 22A
TJ = 25°C
TJ = 150°C
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 50A
ID = 250A
ID = 1.0mA
ID = 150mA
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