参数资料
型号: 2PD601AR/T4
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, SC-59A, TO-236, 3 PIN
文件页数: 2/8页
文件大小: 125K
代理商: 2PD601AR/T4
2004 Feb 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
FEATURES
Available in SOT323 (SC-70) and SOT346 (SC-59)
packages
Available in three different DC current gain versions
(Q, R, S).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN general purpose transistors (see “Simplified outline,
symbol and pinning” for package details).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
MAX. UNIT
VCEO
collector-emitter
voltage
50
V
IC
collector current (DC)
100
mA
hFE
DC current gain
group Q
160
260
group R
210
340
group S
290
460
PRODUCT OVERVIEW
Note
1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PACKAGE
MARKING CODE
hFE GROUP
PHILIPS
EIAJ
2PD601AQ
SOT346
SC-59
ZQ
Q
2PD601AR
SOT346
SC-59
ZR
R
2PD601AS
SOT346
SC-59
ZS
S
2PD601AQW
SOT323
SC-70
*6D
Q
2PD601ARW
SOT323
SC-70
*6E
R
2PD601ASW
SOT323
SC-70
*6F
S
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN
DESCRIPTION
2PD601AQ
1
base
2PD601AR
2
emitter
2PD601AS
3
collector
2PD601AQW
2PD601ARW
2PD601ASW
handbook, halfpage
12
1
3
2
3
MAM321
Top view
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2SA1009-AZ 2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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相关代理商/技术参数
参数描述
2PD601ARW 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN General Purpose Transistor
2PD601ARW T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PD601ARW,115 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PD601AS 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistor
2PD601AS T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2