参数资料
型号: 2PD601AR/T4
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, SC-59A, TO-236, 3 PIN
文件页数: 7/8页
文件大小: 125K
代理商: 2PD601AR/T4
2004 Feb 12
7
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
DATA SHEET STATUS
Notes
1.
Please consult the most recently issued document before initiating or completing a design.
2.
The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
PRODUCT
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
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General
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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http://www.nxp.com/profile/terms, including those
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Quick reference data
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
相关PDF资料
PDF描述
2SA1009-AZ 2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-K 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-M 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-H 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-J-AZ 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2PD601ARW 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN General Purpose Transistor
2PD601ARW T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PD601ARW,115 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PD601AS 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistor
2PD601AS T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2