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参数资料
| 型号： | 2PD601AR/T4 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, SC-59A, TO-236, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 125K |
| 代理商： | 2PD601AR/T4 |
2004 Feb 12
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
Soldering
Reflow soldering is the only recommended soldering method.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
2PD601AQ
plastic surface mounted package; 3 leads
SOT346
2PD601AR
2PD601AS
2PD601AQW
plastic surface mounted package; 3 leads
SOT323
2PD601ARW
2PD601ASW
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
6
V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
Ptot
total power dissipation
SOT346
250
mW
SOT323
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
SOT346
500
K/W
SOT323
625
K/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2PD601ARW | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN General Purpose Transistor |
| 2PD601ARW T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PD601ARW,115 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PD601AS | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistor |
| 2PD601AS T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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