参数资料
型号: 2PD601AR/T4
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, SC-59A, TO-236, 3 PIN
文件页数: 8/8页
文件大小: 125K
代理商: 2PD601AR/T4
NXP Semiconductors
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands
R75/06/pp8
Date of release: 2004 Feb 12
Document order number: 9397 750 12172
相关PDF资料
PDF描述
2SA1009-AZ 2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-K 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-M 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-H 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1009A-J-AZ 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2PD601ARW 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN General Purpose Transistor
2PD601ARW T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PD601ARW,115 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PD601AS 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistor
2PD601AS T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2