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参数资料
| 型号： | 2SJ351 |
| 文件页数： | 4/8页 |
| 文件大小： | 38K |
| 代理商： | 2SJ351 |
2SJ351, 2SJ352
4
150
100
50
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature
Tc (°C)
0
Power vs. Temperature Derating
–0.2
–5
–10
–20
–50
–100 –200
–500
–0.5
–1.0
–2
–5
–10
–20
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Ta = 25°C
IDmax (Continuous)
PW
=
10
ms
1
Shot
PW
=
100
ms
1
Shot
PW
=
1
s
1
Shot
DC
Operation
(T
C =
25°C)
2SJ351
2SJ352
–10
–20
–30
–40
–50
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
TC = 25°C
0
–1
–2
–3
–4
–5
–6
–7
–8
–9
Pch
=
125
W
V
GS
=
–10
V
0
–2
–4
–6
–8
–10
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
TC = 25°C
0
–1
VGS = –10 V
–2
–3
–4
–5
–6
–7
–9
–8
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PDF描述 |
|---|---|
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| 2SJ387(S) | |
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| 2SJ479(S) | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
| 2SJ352-E | 功能描述:MOSFET P-CH 200V 8A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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