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参数资料
| 型号： | 2SJ358-AZ |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | COMPACT, MP-2, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 97K |
| 代理商： | 2SJ358-AZ |
Printed in Japan
MOS FIELD EFFECT TRANSISTOR
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
Can be directly driven by an IC operating at 5 V.
Low on-resistance
RDS(ON) = 0.40
MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.30
MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (Ta = +25 C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
VDSS
VGS = 0
–60
V
Gate-Source Voltage
VGSS
VDS = 0
–20/+10
V
Drain Current (DC)
ID(DC)
–/+3.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms
–/+6.0
A
Duty Cycle
≤ 1 %
Total Power Loss
PT
Mounted on ceramic board of 7.5 cm2
× 0.7 mm
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The information in this document is subject to change without notice.
1994
DATA SHEET
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
23
1
4.2
2.1
1.0
0.4 ±0.05
5.4
±0.25
3.65
±0.1
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA2
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |
| 2SJ360(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,60V/1A/0.73ohm,Pw-Mold |
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