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参数资料
| 型号： | 2SJ358-AZ |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | COMPACT, MP-2, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 97K |
| 代理商： | 2SJ358-AZ |
2SJ358
2
ELECTRICAL SPECIFICATIONS (Ta = +25 C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Drain Shut-down Current
IDSS
VDS = –60 V, VGS = 0
–10
A
Gate Leak Current
IGSS
VGS = –16/+10 V, VDS = 0
–/+10
A
Gate Cutoff Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.4
–2.0
V
Forward Transfer Admittance
|yfs|
VDS = –10 V, ID = –1.0 A
1.8
S
Drain-Source On-Resistance
RDS(on)1
VGS = –4 V, ID = –1.5 A
0.29
0.40
Drain-Source On-Resistance
RDS(on)2
VGS = –10 V, ID = –1.5 A
0.18
0.30
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
600
pF
Output Capacitance
Coss
f = 1.0 MHz
300
pF
Feedback Capacitance
Crss
120
pF
On-Time Delay
td(on)
VDD = –25 V, ID = –1.5 A
6
ns
Rise Time
tr
VGS(on) = –10 V
35
ns
Off-Time Delay
td(off)
RG = 10
, RL = 17
155
ns
Fall Time
tf
95
ns
Gate Input Charge
QG
VDS = –48 V,
23.9
nC
Gate-Source Chanrge
QGS
VGS = –10 V,
1.5
nC
Gate-Drain Charge
QGD
ID = –3.1 A, IG = –2 mA
8.1
nC
Internal Diode Reverse
trr
IF = 3.0 A
95
ns
Recovery Time
di/dt = 50 A/
s
Internal Diode Reverse
Qrr
118
nC
Recovery Charge
CHARACTERISTICS CURVES (Ta = +25 C)
100
25
80
60
40
20
0
50
75
100
125
150
Ta – Ambient Temperature – C
dT
–
Derating
Factor
–
%
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
–10
–1
–5
–2
–1
–0.5
–2
–5
–10
–20
–100
VDS – Drain to Source Voltage – V
ID
–
Drain
Current
–
A
FORWARD BIAS SAFE OPERATING AREA
–50
–0.05
–0.1
–0.2
DS
Single Pulse
10
ms
PW
=
100
ms
1 ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |
| 2SJ360(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,60V/1A/0.73ohm,Pw-Mold |
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