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参数资料
| 型号： | 2SJ358-AZ |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | COMPACT, MP-2, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 97K |
| 代理商： | 2SJ358-AZ |
2SJ358
4
–10
–0.2
–1
–0.1
–0.01
VSD – Source to Drain Voltage – V
ISD
–
Diode
Forward
Current
–
A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–0.0001
–0.001
VGS = 0
Pulsed
–0.4
–0.6
–0.8
–1.0
–1.2
10000
–1
1000
100
VDS – Drain to Source Voltage – V
C
iss
,C
oss
,C
rss
–
Capacitance
–
pF
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 0
f = 1 MHz
–10
–100
Ciss
Coss
Crss
1000
0.1
100
10
td(on)
,t
r,
t
d(off)
,t
r–
Switching
Time
–
ns
SWITCHING CHARACTERISTICS
VDD = –25 V
VGS(ON) = –10 V
110
td(on)
td(off)
tf
tr
ID – Drain Current – A
1000
–0.05
100
10
trr
–
Reverse
Recovery
Time
–
ns
VGS = 0
di/dt = 50 A/ s
–1
–10
ID – Diode Forward Current – A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
–0.1
–0.5
–5
1000
1 m
10
0.1
rth(j–a)
–
Transient
Thermal
Resistance
–
C/
W
Single Pulse
Using ceramic board
of 7.5 cm2
× 0.7 mm
10
100
PW – Pulse Width – s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
1
100
100 m
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |
| 2SJ360(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,60V/1A/0.73ohm,Pw-Mold |
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