- 您现在的位置：买卖IC网 > PDF目录55794 > 2SJ358-AZ 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ358-AZ |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | COMPACT, MP-2, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 97K |
| 代理商： | 2SJ358-AZ |
2SJ358
5
RELATED DOCUMENTS
Document Name
Document No.
Semiconductor Device Mounting Technology Manual
IEI-1207
NEC Semiconductor Device Reliability/Quality Control System
TEI-1202
Guide to Quality Assurance for Semiconductor Device
MEI-1202
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ386 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ390 | 0.19 ohm, POWER, FET |
| 2SJ402(TO-220FL) | 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ418TP | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ451ZK-TR-E | 200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |
| 2SJ360(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,60V/1A/0.73ohm,Pw-Mold |
发布紧急采购，3分钟左右您将得到回复。