参数资料
型号: 2SJ358-AZ
元件分类: JFETs
英文描述: 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: COMPACT, MP-2, 3 PIN
文件页数: 3/5页
文件大小: 97K
代理商: 2SJ358-AZ
2SJ358
3
–10
–1
–8
–6
–4
–2
0–2
–3
–4
–5
VDS – Drain to Source Voltage – V
ID
Drain
Current
A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–10
–1
–0.1
–0.01
–2
–3
VGS – Gate to Source Voltage – V
ID
Drain
Current
–A
TRANSFER CHARACTERISTICS
–4
–0.00001
–0.0001
–0.001
Pulsed
–10
V
–4.5
V
–4.0
V
–3.5 V
–3.0 V
–2.5 V
VGS = –2.0 V
Ta = –25 C
Ta = 150 C
Ta = 0 C
Ta = 25 C
Ta = 75 C
10
–0.001
1
0.1
0.01
–0.01
–0.1
–1
ID – Drain Current – A
|y
fs
|–
Forward
Transfer
Admittence
S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.7
–0.01
0.3
–0.01
–0.1
ID – Drain Current – A
R
DS(on)
Drain
to
Source
On-State
Resistance
–10
0
0.1
VDS = –10 V
Pulsed
0.001
–0.0001
Ta = 75 C
Ta = 25 C
Ta = 150 C
Ta = 0 C
Ta = –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
–1
0.5
VDS = –10 V
Pulsed
VGS = –4 V
Pulsed
0.5
–0.01
0.4
0.3
0.1
–0.1
–1
–10
ID – Drain Current – A
R
DS(on)
Drain
to
Source
On-State
Resistance
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
VGS = –10 V
Pulsed
0
–0.001
Ta = 25 C
0.2
Ta = 0 C
Ta = –25 C
Ta = 150 C
Ta = 75 C
0.6
0.2
0.4
–2
VGS – Gate to Source Voltage – V
R
DS(on)
Drain
to
Source
On-State
Resistance
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
0.6
0.2
0.4
–4
–6
–8 –10 –12 –14 –16 –18 –20
ID = 1.5 A
ID = 3.0 A
Ta = 25 C
Ta = –25 C
Ta = 0 C
Ta = 75 C
Ta = 150 C
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