参数资料
型号: 2SK3076(L)
元件分类: JFETs
英文描述: 0.9 ohm, POWER, FET
封装: LDPAK-3
文件页数: 4/11页
文件大小: 58K
代理商: 2SK3076(L)
2SK3076(L),2SK3076(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
500
V
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
7A
Drain peak current
I
D(pulse)
Note1
28
A
Body-drain diode reverse drain current
I
DR
7A
Channel dissipation
Pch
Note2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
500
V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±30
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25V, VDS = 0
Zero gate voltege drain current
I
DSS
250
AV
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state
R
DS(on)
0.7
0.9
I
D = 4A, VGS = 10V
Note4
resistance
Forward transfer admittance
|y
fs|
3.5
6.0
S
I
D = 4A, VDS = 10V
Note4
Input capacitance
Ciss
1100
pF
V
DS = 10V
Output capacitance
Coss
310
pF
V
GS = 0
Reverse transfer capacitance
Crss
50
pF
f = 1MHz
Turn-on delay time
t
d(on)
15
ns
I
D =4A, VGS = 10V
Rise time
t
r
55
ns
R
L = 7.5
Turn-off delay time
t
d(off)
100
ns
Fall time
t
f
—48
ns
Body–drain diode forward voltage
V
DF
0.9
V
I
F = 7A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
120
ns
I
F = 7A, VGS = 0
diF/ dt =100A/
s
Note:
4. Pulse test
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