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参数资料
| 型号： | 2SK3076(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.9 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 58K |
| 代理商： | 2SK3076(L) |
2SK3076(L),2SK3076(S)
3
Main Characteristics
80
60
40
20
0
50
100
150
200
20
16
12
8
4
0
10 V
10
20
30
40
50
20
16
12
8
4
0
24
68
10
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
V
= 20 V
Pulse Test
DS
0.1
0.3
1
3
10
30
100
30
10
3
1
0.3
0.1
0.03
0.01
DC
Operation
(Tc
=
25°C)
Ta = 25 °C
10
s
100
s
1 ms
PW
=
10
ms
(1shot)
Operation in
this area is
limited by R DS(on)
6 V
4 V
5 V
75°C
–25°C
Ta = 25°C
V
= 4 V
GS
Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3082(S) | 0.15 ohm, POWER, FET |
| 2SK3082(S) | 0.15 ohm, POWER, FET |
| 2SK3082L-E | 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3116-S | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3076S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3077 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS |
| 2SK3077_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
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