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参数资料
| 型号： | 2SK3076(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.9 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 58K |
| 代理商： | 2SK3076(L) |
2SK3076(L),2SK3076(S)
4
10
8
6
4
2
0
48
12
16
20
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
0.1
0.2
0.5
12
5
10
500
100
200
20
50
10
2
5
1
0.5
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
I
= 2 A
D
10 A
5 A
Drain Current
I
(A)
D
0.5
2
10
50
15
20
2
0.1
0.5
0.2
1
5
15 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
(
)
W
DS(on)
I
= 10 A
D
0.05
V
= 10 V
GS
V
= 10 V
Pulse Test
GS
2, 5 A
V
= 20 V
Pulse Test
DS
25 °C
Tc = –25 °C
75 °C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3082(S) | 0.15 ohm, POWER, FET |
| 2SK3082(S) | 0.15 ohm, POWER, FET |
| 2SK3082L-E | 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3116-S | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3076S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3077 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS |
| 2SK3077_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
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