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参数资料
| 型号： | 2SK3386-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 10/10页 |
| 文件大小： | 235K |
| 代理商： | 2SK3386-Z |
Data Sheet D14471EJ4V0DS
7
2SK3386
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
13
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-0.1
+0.2
0.5-0.1
+0.2
2) TO-252 (MP-3Z)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3386-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 34A 21m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252 |
| 2SK3386-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3387 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
| 2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3387_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
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