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参数资料
| 型号： | 2SK3386-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 9/10页 |
| 文件大小： | 235K |
| 代理商： | 2SK3386-Z |
Data Sheet D14471EJ4V0DS
6
2SK3386
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
10
100
1 m10 m
VDD = 30 V
RG = 25
Ω
VGS = 20 V
→0 V
IAS = 28 A
10
μ
100
μ
0.1
E
AS = 78
mJ
1
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
VDD = 30 V
RG = 25
Ω
VGS = 20 V
→ 0 V
IAS
≤ 28 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3386-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 34A 21m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252 |
| 2SK3386-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3387 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
| 2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3387_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
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